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Porous GaN nanowires synthesized using thermal chemical vapor deposition

✍ Scribed by Seung Yong Bae; Hee Won Seo; Jeunghee Park; Hyunik Yang; Bongsoo Kim

Book ID
104108257
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
439 KB
Volume
376
Category
Article
ISSN
0009-2614

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✦ Synopsis

Porous structured GaN nanowires were synthesized with a large scale by chemical vapor deposition of Ga/Ga 2 O 3 / B 2 O 3 /C mixture under NH 3 flow. The average diameter is 40 nm and the length is up to 1 mm. The porous GaN nanowires consist of the wurtzite single crystal grown with the [0 1 1] direction parallel to the wire axis. The size of pores is 5-20 nm. The porous GaN crystals are partially coated with nearly amorphous BCN layers. The photoluminescence exhibits a broad band in the energy range of 2.1-3.6 eV.

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**GaN nanowires with diameters in the quantum‐confinement** size regime (4–10 nm, ∼10 nm in Figure) are prepared on large‐area substrates through catalytic reaction of Ga and NH~3~ in a hot‐filament chemical vapor deposition system. The synthetic method is reproducible and could be applied to the gr