High-Quality Ultra-Fine GaN Nanowires Sy
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X. Chen; J. Xu; R.M. Wang; D. Yu
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Article
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2003
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John Wiley and Sons
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English
β 193 KB
**GaN nanowires with diameters in the quantumβconfinement** size regime (4β10 nm, βΌ10 nm in Figure) are prepared on largeβarea substrates through catalytic reaction of Ga and NH~3~ in a hotβfilament chemical vapor deposition system. The synthetic method is reproducible and could be applied to the gr