High-Quality Ultra-Fine GaN Nanowires Synthesized Via Chemical Vapor Deposition

✍ Scribed by X. Chen; J. Xu; R.M. Wang; D. Yu

• Publisher: John Wiley and Sons
• Year: 2003
• Tongue: English
• Weight: 193 KB
• Volume: 15
• Category: Article
• ISSN: 0935-9648
• DOI: 10.1002/adma.200390097

✦ Synopsis

GaN nanowires with diameters in the quantum‐confinement size regime (4–10 nm, ∼10 nm in Figure) are prepared on large‐area substrates through catalytic reaction of Ga and NH~3~ in a hot‐filament chemical vapor deposition system. The synthetic method is reproducible and could be applied to the growth of other semiconductor nanostructures.