Role of dopant incorporation in low-temperature Si epitaxial growth by rapid thermal processing chemical vapor deposition

✍ Scribed by Hsieh, T.Y.; Jung, K.H.; Kwong, D.L.; Hitzman, C.J.; Brennan, R.

• Book ID: 114534421
• Publisher: IEEE
• Year: 1992
• Tongue: English
• Weight: 405 KB
• Volume: 39
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.108232