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[Japan Soc. Applied Phys 2003 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (10-12 June 2003)] 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) - A novel cell technology using N-doped GeSbTe films for phase change RAM

✍ Scribed by Horii, H.; Yi, J.H.; Park, J.H.; Ha, Y.H.; Baek, I.G.; Park, S.O.; Hwang, Y.N.; Lee, S.H.; Kim, Y.T.; Lee, K.H.; U-In Chung, ; Moon, J.T.

Book ID: 121195237
Publisher: Japan Soc. Applied Phys
Year: 2003
Weight: 194 KB
Category: Article
ISBN-13: 9784891140335
DOI: 10.1109/VLSIT.2003.1221143

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