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[Japan Soc. Applied Phys 2003 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (10-12 June 2003)] 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) - An edge contact type cell for Phase Change RAM featuring very low power consumption

✍ Scribed by Ha, Y.H.; Yi, J.H.; Horii, H.; Park, J.H.; Joo, S.H.; Park, S.O.; U-In Chung, ; Moon, J.T.

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