## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e
Isothermal growth of epitaxial layers of gallium arsenide from stirred gallium solutions
โ Scribed by F.A. Kuznetsov; S.T. Tchistanova; L.A. Borisova; V.I. Kosyakov; A.N. Dorohov
- Publisher
- Elsevier Science
- Year
- 1976
- Tongue
- English
- Weight
- 253 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0040-6090
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