Institute of Semiconductor Physics, Siberian Branch of the Academy of Sciences of the USSR h'ovosibirsk 90, USSR
Liquid Phase Epitaxial Growth of Undoped Gallium Arsenide from Bismuth and Gallium Melts
Electrical properties of undoped GaAs layers grown from G a and Bi melts under identical conditions are compared as a function of growth temperature and pregrowth baking time. Identification of residual shallow donors and acceptors is performed by means of laser photoelectrical magnetic spectroscopy and low temperature photoluminescence. It is shown that a change of solvent metal results in complete alteration of major background impurities in grown epilayers due, mainly, to changes of distribution coefficients of these impurities. High purity, low compensation n-GaAs layers can be grown from Bi melt (epilayers with the Hall mobility of electrons p 7 7 ~ x 150000 cm2/Vs at n = 2.5 -1014cm-S has been grown). npOBeReH0 CpaBHeHHe 3 J I e K ~p ~s e e K a x CBOfiCTB HeJIHrHPOBaHHbIX CJIO&B GaAs, XlOJIy-4eHHbIX MeTOnOM mHAKO(Pa3HOfi 3IIHTaKCHH (3fCQ3) H3 PaCnJIaBOB I-aJIJIHH H BHCMyTa B HHeHTHYHbIX YCJIOBHHX, B 3aBHCHMOCTH OT TeMllepaTypbI P O C T a H IIpOJXOJlXHTeJIbHOCTH MarHHTOCIleKTpOCKOIlHH H HH3KOTeMlIepaTypHOfi (P0TOJIH)MBlHeCUeHUHH np0BeHeHa HAeH-TH(PHKaUHR OCTaTOYHbIX XOHOpHbIX H aKIIeIITOpHbIX IIPHMeCefi B CJIORX. nOKa3aH0, IlpHpOAbI OCHOBHbIX (POHOBbIX IlpHMeCea B CJIORX, YTO 06YCJIOBJIeHO rJIaBHblM o 6 p a 3 0 ~ 3HaYHTeJIbHbIM M3MeHeHHeM K03(P(PHUHeHTOB paCIIpeEeJIeHHR (POHOBblX XlpHMeCefi. nOKa3aH0, YTO HCIIOJIb30BaHHe BHCMYTa B EFaqeCTBe PaCTBOpElTeJIR npH 3fC03 ll03BOJIReT IIOJIyqaTb qHCTbIe MaJIOKOMneIICHPOBaHHbIe CJIOHGsAs (IlOJIy~IeHbI CJIOH C XOJIJIOBCKOfi ITOABHXHOCTbH) 3JIeKTPOHOB p 7 7 ~ % 150000 Cm2/V . S npll 12. = 2.5 -loi4 Cm9). n p e ~a n ~~a ~c ~a n b ~o r o oTxima X H ~K O ~~ (Pa3b1. MeTonaMH naaepaofi ( P o ~o a n e ~~p ~s e c ~o f i YTO 3 a ~e ~a pacTBopmenR npn XQ3 HenerHposaHHoro GaAs I I ~H B O ~T K H ~M ~H ~H H H )