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Thermal annealing of liquid phase epitaxial gallium arsenide

โœ Scribed by D. Alexiev; K.S.A. Butcher; M. Edmondson; T.L. Tansley


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
255 KB
Volume
135
Category
Article
ISSN
0022-0248

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Institute of Semiconductor Physics, Siberian Branch of the Academy of Sciences of the USSR h'ovosibirsk 90, USSR ## Liquid Phase Epitaxial Growth of Undoped Gallium Arsenide from Bismuth and Gallium Melts Electrical properties of undoped GaAs layers grown from G a and Bi melts under identical con