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Heavy doped n-type single crystal epitaxial layers of gallium arsenide

โœ Scribed by Forrest V. Williams

Publisher
Elsevier Science
Year
1964
Tongue
English
Weight
168 KB
Volume
7
Category
Article
ISSN
0038-1101

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Growth of gallium antimonide epitaxial l
Growth of gallium antimonide epitaxial layers on indium arsenide substrates
โœ Dr. L. D. Pramatarova; Dr. D. N. Tretjakov ๐Ÿ“‚ Article ๐Ÿ“… 1981 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 347 KB ๐Ÿ‘ 2 views

## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e