✦ LIBER ✦
Process and device characterization of high voltage gallium arsenide P-i-N layers grown by an improved liquid phase epitaxy method
✍ Scribed by G. Ashkinazi; Tz. Hadas; B. Meyler; M. Nathan; L. Zolotarevski; O. Zolotarevski
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 693 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0038-1101
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