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Irradiation effects of synchrotron radiation on silicon epitaxial growth using a disilane molecular beam system

✍ Scribed by Jun-ichi Takahashi; Yuichi Utsumi; Housei Akazawa; Izumi Kawashima; Tsuneo Urisu


Book ID
107864103
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
746 KB
Volume
218
Category
Article
ISSN
0040-6090

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Surface hydrogen and growth mechanisms are investigated for synchrotron radiation (SR)assisted gas source molecular beam epitaxy (SR-GSMBE) using Si 2 H 6 on the Si(100) surface in the low-temperature region. The surface silicon hydrides (deuterides) are monitored in situ during the epitaxial growth