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Effect of growth conditions on photoluminescence of erbium-doped silicon layers grown using sublimation molecular-beam epitaxy

✍ Scribed by V. G. Shengurov; S. P. Svetlov; V. Yu. Chalkov; B. A. Andreev; Z. F. Krasil’nik; D. I. Kryzhkov

No coin nor oath required. For personal study only.

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