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Effect of growth temperature on photoluminescence from ion-beam-doped molecular beam epitaxial Si:As

✍ Scribed by N.L. Rowell; D.C. Houghton; J.-P. Noël; J.E. Greene


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
330 KB
Volume
184
Category
Article
ISSN
0040-6090

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