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Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy

✍ Scribed by S. A. Denisov; S. P. Svetlov; V. Yu. Chalkov; V. G. Shengurov; D. A. Pavlov; E. V. Korotkov; E. A. Pitirimova; V. N. Trushin

Book ID: 110165919
Publisher: SP MAIK Nauka/Interperiodica
Year: 2007
Tongue: English
Weight: 243 KB
Volume: 43
Category: Article
ISSN: 0020-1685
DOI: 10.1134/s0020168507040012

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