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Structure of GaAs heteroepitaxial layer grown on GaP(001) by molecular beam epitaxy

โœ Scribed by Takashi Nomura; Kenji Murakami; Kenji Ishikawa; Masahiro Miyao; Tsuyoshi Yamaguchi; Akira Sasaki; Minoru Hagino

Publisher
Elsevier Science
Year
1991
Weight
72 KB
Volume
242
Category
Article
ISSN
0167-2584

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Photodetectors fabricated on heteroepita
Photodetectors fabricated on heteroepitaxial GaAs/Si structures grown by molecular beam epitaxy
โœ N.A. Papanicolaou; G.W. Anderson; J.A. Modolo; A. Georgakilas ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 562 KB

Photodetectors were fabricated on GaAs/Si epitaxial structures grown on high resistivity Si substrates by modulated molecular beam epitaxy. Our efforts were focused on enhancing the substrate surface quality and optimizing the deposition conditions during the early stages of growth of the GaAs on th