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Scanning tunneling microscopy on molecular-beam-epitaxy-grown GaAs(001) surfaces

โœ Scribed by Masafumi Tanimoto; Jiro Osaka; Takako Takigami; Shigeru Hirono; Kiyoshi Kanisawa


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
806 KB
Volume
42-44
Category
Article
ISSN
0304-3991

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Atomic scale characterization of cleaved surfaces of cubic GaN (c-GaN) epilayers was established in real space. Using cross-sectional scanning tunneling microscopy (XSTM), c-GaN epilayers grown on GaAs (001) by low pressure MOVPE were investigated. The analysis of STM observations revealed that the