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Virtual-surfactant mediated epitaxy of InAs on GaAs(001) studied by scanning tunneling microscopy

โœ Scribed by J. Behrend; M. Wassermeier; K.H. Ploog


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
347 KB
Volume
167
Category
Article
ISSN
0022-0248

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Ultrahigh vacuum scanning tunnelling mic
โœ Bolotov, L. N.; Nakamura, A.; Evtikhiev, V. P.; Tokranov, V. E.; Titkov, A. N. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 372 KB ๐Ÿ‘ 2 views

The morphology and electronic properties of InAs quantum dots (QDs) on the GaAs(001) surface has been studied by ultrahigh vacuum scanning tunnelling microscopy/spectroscopy after removal of a preliminary deposited protective As layer. A thermal annealing procedure has been developed, which, applied