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GaAs initial growth on InAs (001) vicinal surfaces observed by scanning tunneling microscopy

✍ Scribed by Nobuyuki Ikoma; Shunsuke Ohkouchi

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 528 KB
Volume: 150
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(95)80196-j

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The morphology and electronic properties of InAs quantum dots (QDs) on the GaAs(001) surface has been studied by ultrahigh vacuum scanning tunnelling microscopy/spectroscopy after removal of a preliminary deposited protective As layer. A thermal annealing procedure has been developed, which, applied