Cross-Sectional Scanning Tunneling Microscopy Characterization of Cubic GaN Epilayers Grown on (001) GaAs
✍ Scribed by Kazama, T. ;Yasunaga, F. ;Taniyasu, Y. ;Jia, A. ;Kato, Y. ;Kobayashi, M. ;Yoshikawa, A. ;Takahashi, K.
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 213 KB
- Volume
- 180
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Atomic scale characterization of cleaved surfaces of cubic GaN (c-GaN) epilayers was established in real space. Using cross-sectional scanning tunneling microscopy (XSTM), c-GaN epilayers grown on GaAs (001) by low pressure MOVPE were investigated. The analysis of STM observations revealed that the atomic arrangement of the c-GaN (1 10) surface depended on the crystal quality of the c-GaN epilayer. For high quality c-GaN regions, the STM image confirmed that the c-GaN (1 10) surface was a 1 Â 1 reconstruction in analogy to GaAs. On the other hand, for poor quality c-GaN regions, a structure different from the 1 Â 1 reconstruction was observed, which was the disordered structure composed of atomic rows along the growth direction. In addition, stacking faults parallel to the c-GaN (111) plane, which gave rise to hexagonal GaN inclusions in the c-GaN epilayer, were characterized in real space.