Some critical issues on growth of high quality Si and SiGe films using a solid-source molecular beam epitaxy system

✍ Scribed by W.-X. Ni; W.M. Chen; I.A. Buyanova; A. Henry; G.V. Hansson; B. Monemar

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 375 KB
• Volume: 157
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(95)00411-4