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Molecular beam epitaxial growth of AlGaAs p-n junctions on GaAs(111)A substrates using only silicon dopant

✍ Scribed by K. Fujita; K. Nitatori; M. Hosoda; T. Egawa; Y. Niwano; T. Jimbo; M. Umeno; T. Watanabe

No coin nor oath required. For personal study only.

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