✦ LIBER ✦

MBE growth of submicron carrier confinement structures on patterned GaAs(111)A substrates using only silicon dopant

✍ Scribed by K Fujita; H Ohnishi; M Hirai; K Shimada; T Watanabe

No coin nor oath required. For personal study only.

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MBE growth of GaAs p-n junction LEDs on

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Molecular beam epitaxial growth of AlGaA

✍ K. Fujita; K. Nitatori; M. Hosoda; T. Egawa; Y. Niwano; T. Jimbo; M. Umeno; T. W 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 284 KB