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MBE growth of GaAs p-n junction LEDs on (111)A GaAs substrates using only silicon dopant

✍ Scribed by K. Fujita; A. Shinoda; M. Inai; T. Yamamoto; M. Fujii; D. Lovell; T. Takebe; K. Kobayashi

No coin nor oath required. For personal study only.

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