IR laser-induced process for chemical vapor deposition of polyselenocarbosilane films
✍ Scribed by Magna Santos; Luis Díaz; Markéta Urbanová; Dana Pokorná; Zdeněk Bastl; Jan Šubrt; Josef Pola
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 471 KB
- Volume
- 76
- Category
- Article
- ISSN
- 0165-2370
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📜 SIMILAR VOLUMES
## Continuous -wave CO 2 -laser-induced gas-phase decomposition of H 3 SiOSiH 3 , dominated by elimination and polymerization of transient silanone H 2 Si=O and yielding silane and hydrogen as side-products, represents a convenient process for chemical vapour deposition of poly(hydridosiloxane) fi
Solid perhydridosilicone films have been produced by transversely excited atmospheric (TEA) and continuous-wave CO 2 laser-induced gas-phase decompositions of H 3 SiOSiH 3 controlled by elimination and polymerization of transient silanone H 2 Si=O and affording silane and hydrogen as side products.