Solid perhydridosilicone films have been produced by transversely excited atmospheric (TEA) and continuous-wave CO 2 laser-induced gas-phase decompositions of H 3 SiOSiH 3 controlled by elimination and polymerization of transient silanone H 2 Si=O and affording silane and hydrogen as side products.
IR laser-induced decomposition of disiloxane for chemical vapour deposition of poly(hydridosiloxane) films
✍ Scribed by Josef Pola; Markéta Urbanová; Vladislav Dřínek; Jan Šubrt; Helmut Beckers
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 143 KB
- Volume
- 13
- Category
- Article
- ISSN
- 0268-2605
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✦ Synopsis
Continuous
-wave CO 2 -laser-induced gas-phase decomposition of H 3 SiOSiH 3 , dominated by elimination and polymerization of transient silanone H 2 Si=O and yielding silane and hydrogen as side-products, represents a convenient process for chemical vapour deposition of poly(hydridosiloxane) films.
📜 SIMILAR VOLUMES
The UV-induced photolysis of trimethyl(vinyloxy)silane (TMVSi) induced by ArF laser, affording a multitude of unsaturated hydrocarbons and a solid polydimethylsiloxane, represents a convenient process of chemical vapour deposition in which the silicon of the parent is almost completely utilized for