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Perhydridosilicone films produced by IR laser-induced chemical vapour deposition from disiloxane

✍ Scribed by Josef Pola; Zdenĕk Bastl; Markéta Urbanová; Jan S̆ubrt; Helmut Beckers

Publisher: John Wiley and Sons
Year: 2000
Tongue: English
Weight: 260 KB
Volume: 14
Category: Article
ISSN: 0268-2605
DOI: 10.1002/1099-0739(200009)14:9<453::aid-aoc31>3.0.co;2-c

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✦ Synopsis

Solid perhydridosilicone films have been produced by transversely excited atmospheric (TEA) and continuous-wave CO 2 laser-induced gas-phase decompositions of H 3 SiOSiH 3 controlled by elimination and polymerization of transient silanone H 2 Si=O and affording silane and hydrogen as side products. The decomposition mechanism is supported by evidence of scavenged intermediates and minor volatile products. The films are characterized by FT infrared and x-ray photoelectron spectroscopy and by scanning electron microscopy and shown to undergo facile oxidation of the topmost layers in air and chemical changes upon argon ion sputtering.

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✍ Josef Pola; Markéta Urbanová; Vladislav Dřínek; Jan Šubrt; Helmut Beckers 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 143 KB 👁 1 views

## Continuous -wave CO 2 -laser-induced gas-phase decomposition of H 3 SiOSiH 3 , dominated by elimination and polymerization of transient silanone H 2 Si=O and yielding silane and hydrogen as side-products, represents a convenient process for chemical vapour deposition of poly(hydridosiloxane) fi