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Ion implantation in 4H–SiC

✍ Scribed by J. Wong-Leung; M.S. Janson; A. Kuznetsov; B.G. Svensson; M.K. Linnarsson; A. Hallén; C. Jagadish; D.J.H. Cockayne


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
530 KB
Volume
266
Category
Article
ISSN
0168-583X

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Annealing behaviour of In impurities in
✍ J. Meier; N. Achtziger; T. Licht; M. Uhrmacher; W. Witthuhn 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 337 KB

The annealing behaviour of indium impurities in SIC after ion implantation, and the formation and stability of complexes at In in Sic have been studied by perturbed angular correlation (PAC) spectroscopy for the first time. Samples of 6H-SiC and 3C-Sic single crystals were doped with radioactive "'I