The defects produced in 4H-SiC epitaxial layers by irradiation with 800 keV C + were characterized by Low Temperature Photoluminescence. Ion beam irradiation induces the formation of some sharp lines in the wavelength range 428-441 nm of the photoluminescence spectra, that are typically known as ''a
✦ LIBER ✦
Point defect production efficiency in ion irradiated 4H–SiC
✍ Scribed by L. Calcagno; A. Ruggiero; P. Musumeci; G. Cuttone; F. La Via; G. Foti
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 221 KB
- Volume
- 257
- Category
- Article
- ISSN
- 0168-583X
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