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Defect production in ion-irradiated aluminum

✍ Scribed by R.S. Averback; R. Benedek; K.L. Merkle; J. Sprinkle; L.J. Thompson


Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
723 KB
Volume
113
Category
Article
ISSN
0022-3115

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Defect production in neutron irradiated
✍ J.G. Marques; K. Lorenz; N. Franco; E. Alves πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 160 KB

Rutherford backscattering in the channelling mode (RBS/C) and high resolution X-ray diffraction (XRD) were used to characterize GaN films after irradiation with fast and thermal neutrons to fluences of 1.0 β€’ 10 19 n/cm 2 and 4.8 β€’ 10 19 n/cm 2 , respectively. RBS/C experiments indicate that Ga atoms