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Point defects induced in ion irradiated 4H–SiC probed by exciton lines

✍ Scribed by G. Litrico; M. Zimbone; L. Calcagno; P. Musumeci; G.A. Baratta; G. Fotil

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 247 KB
Volume: 267
Category: Article
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2009.01.147

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