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Modelling of ion implantation in SiC crystals

✍ Scribed by Ivan Chakarov; Misha Temkin


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
217 KB
Volume
242
Category
Article
ISSN
0168-583X

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The annealing behaviour of indium impurities in SIC after ion implantation, and the formation and stability of complexes at In in Sic have been studied by perturbed angular correlation (PAC) spectroscopy for the first time. Samples of 6H-SiC and 3C-Sic single crystals were doped with radioactive "'I