Solid-state microwave annealing of ion-implanted 4H–SiC
✍ Scribed by Siddarth G. Sundaresan; Yong-lai Tian; Mark C. Ridgway; Nadeemullah A. Mahadik; Syed B. Qadri; Mulpuri V. Rao
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 237 KB
- Volume
- 261
- Category
- Article
- ISSN
- 0168-583X
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📜 SIMILAR VOLUMES
The recrystallization process of the phosphorus ion implantation-induced amorphous layer in 4H-SiC(1 1 2 À0) is investigated in the annealing temperature range from 660 to 720 °C by means of Rutherford backscattering spectrometry. The phosphorus ions are multiply implanted to p-type 4H-SiC(1 1 2 À0)
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