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Annealing study of a bistable defect in proton-implanted n-type 4H-SiC

✍ Scribed by H.Kortegaard Nielsen; D.M. Martin; P. Lévêque; A. Hallén; B.G. Svensson

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
305 KB
Volume
340-342
Category
Article
ISSN
0921-4526

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✍ A. Poggi; F. Moscatelli; Y. Hijikata; S. Solmi; R. Nipoti 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 196 KB

The manufacture process and the electrical characterization of MOS devices fabricated by wet oxidation of N + implanted n-type 4H-SiC are here presented. Different implantation fluence and energy values were used with the aims to study the effect of the N concentration both at the SiO 2 /SiC interfa