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Study of bistable defects created after high-temperature annealing in 34 MeV proton irradiated Si diodes

✍ Scribed by D. Creanza; D. Giordano; M. de Palma; L. Fiore; N. Manna; S. My; V. Radicci; P. Tempesta

Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 288 KB
Volume: 530
Category: Article
ISSN: 0168-9002
DOI: 10.1016/j.nima.2004.05.060

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