Combined analysis of the carrier recombination and generation lifetime as well as reverse recovery durations (t RR ), dependent on proton irradiation fluence in the range of 7 Â 10 12 À7 Â 10 14 p/cm 2 , has been performed in FZ silicon PIN diodes and wafer structures. A d-layer and triangle profile
Study of recombination characteristics in 2 MeV protons irradiated and annealed Si structures
✍ Scribed by J. Višniakov; T. Čeponis; E. Gaubas; A. Uleckas
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 368 KB
- Volume
- 607
- Category
- Article
- ISSN
- 0168-9002
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