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Structural and optical study of irradiation effect in GaN epilayers induced by 308 MeV Xe ions

โœ Scribed by L.M. Zhang; C.H. Zhang; L.Q. Zhang; X.J. Jia; T.D. Ma; Y. Song; Y.T. Yang; B.S. Li; Y.F. Jin

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
634 KB
Volume
269
Category
Article
ISSN
0168-583X

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