Combined analysis of the carrier recombination and generation lifetime as well as reverse recovery durations (t RR ), dependent on proton irradiation fluence in the range of 7 Â 10 12 À7 Â 10 14 p/cm 2 , has been performed in FZ silicon PIN diodes and wafer structures. A d-layer and triangle profiles of radiation induced defects were formed by varying energy of protons in the range 2-3 MeV. Carrier decay constituents and values of recombination lifetime have been evaluated by employing a microwave probed photoconductivity transient technique, while deep levels spectra ascribed to generation lifetime variations have been examined by exploiting capacitance deep-level transient (DLTS) spectroscopy.
Recombination lifetime decreases from several ms to few ns, while DLTS spectra show an increase in the amplitude of a DLTS peak at 170 K with irradiation fluence. Transforms of DLTS spectra and a decrease in density of the majority carrier traps have been revealed after 24 h isochronal anneals in the range of temperatures of 80-420 1C. Inhomogeneous depth distribution of recombination lifetime in proton irradiated samples has been revealed from the cross-sectional scans of the excess carrier lifetime measured by MW-PC technique and compared for d-layer and triangle profiles of radiation induced defects. After isochronal anneals, the t RR changes its behaviour as a function of irradiation fluence.