Combined analysis of the carrier recombination and generation lifetime as well as reverse recovery durations (t RR ), dependent on proton irradiation fluence in the range of 7 Â 10 12 À7 Â 10 14 p/cm 2 , has been performed in FZ silicon PIN diodes and wafer structures. A d-layer and triangle profile
✦ LIBER ✦
Stopping of 0.3–1.2 MeV/u protons and alpha particles in Si
✍ Scribed by M. Abdesselam; S. Ouichaoui; M. Azzouz; A.C. Chami; M. Siad
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 296 KB
- Volume
- 266
- Category
- Article
- ISSN
- 0168-583X
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