๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Study of deep level defect behavior in undoped n-InP (1 0 0) after rapid thermal annealing

โœ Scribed by V. Janardhanam; A. Ashok Kumar; V. Rajagopal Reddy; Chel Jong Choi


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
227 KB
Volume
88
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Deep level transient spectroscopy (DLTS)
โœ C. Nyamhere; A.G.M. Das; F.D. Auret; A. Chawanda; C.A. Pineda-Vargas; A. Venter ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 373 KB

Deep level transient spectroscopy (DLTS) and Laplace-DLTS have been used to investigate the defects created in Sb doped Ge after irradiation with 2 MeV protons having a fluence of 1 ร‚ 10 13 protons/cm 2 . The results show that proton irradiation resulted in primary hole traps at E V รพ0.15 and E V รพ