Ion bombardment of SiO2/Si and Si measured by in situ X-ray reflectivity
β Scribed by E. Chason; T.M. Mayer; D. McIlroy; C.M. Matzke
- Book ID
- 113283482
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 460 KB
- Volume
- 80-81
- Category
- Article
- ISSN
- 0168-583X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
X-ray absorption spectra of Si, SiO and SiOt in the Si K edge region are presented. They reveal a strong influence of the type of silicon bond on the structure of the absorption spectra situated towards high energies of the edge. These spectra show that the SiO oxide cannot be taken as a mixture of
## Abstract An Xβray Si __L__~2,3~βemission spectroscopy study of a SiO~2~/nβSi heterostructure containing a thin oxide layer of __d__β=β20βnm thickness implanted by Si^+^ ions with an energy 12βkeV is reported. The maximum concentration of implanted Si^+^ ions is located close to the SiO~2~βSi int