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Ion beam synthesis of SiC by C implantation into SIMOX(1 1 1)

✍ Scribed by R.M.S. dos Reis; R.L. Maltez; H. Boudinov


Book ID
108224488
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
653 KB
Volume
267
Category
Article
ISSN
0168-583X

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The recrystallization process of the phosphorus ion implantation-induced amorphous layer in 4H-SiC(1 1 2 Γ€0) is investigated in the annealing temperature range from 660 to 720 Β°C by means of Rutherford backscattering spectrometry. The phosphorus ions are multiply implanted to p-type 4H-SiC(1 1 2 Γ€0)