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Preservation of polytypic structure in implanted 4H-SiC(1 1 0 0)

✍ Scribed by M Satoh; K Okamoto; Y Nakaike; K Kuriyama; M Kanaya; N Ohtani


Book ID
114170829
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
201 KB
Volume
148
Category
Article
ISSN
0168-583X

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Recrystallization process of phosphorus
✍ M. Satoh; T. Hitomi; T. Suzuki πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 106 KB

The recrystallization process of the phosphorus ion implantation-induced amorphous layer in 4H-SiC(1 1 2 Γ€0) is investigated in the annealing temperature range from 660 to 720 Β°C by means of Rutherford backscattering spectrometry. The phosphorus ions are multiply implanted to p-type 4H-SiC(1 1 2 Γ€0)