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Ion-beam-induced epitaxial crystallisation of metastable Si1−x−yGexCy layers fabricated by Ge and C ion implantation

✍ Scribed by Naoto Kobayashi; Masataka Hasegawa; Nobuyuki Hayashi; Hisao Tanoue; Hajime Shibata; Yunosuke Makita

No coin nor oath required. For personal study only.

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