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Thermal solid phase epitaxial growth and ion-beam induced crystallisation of Ge+ ion implanted layers in silicon

✍ Scribed by P. Songsiriritthigul; G. Holmén

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Relaxation of strain during solid phase

✍ G. Holmén; Prayoon Songsiriritthigul 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 695 KB

Solid-Phase-Epitaxial Growth in Ion-Impl

✍ Narayan, J. ;Holland, O. W. 📂 Article 📅 1982 🏛 John Wiley and Sons 🌐 English ⚖ 985 KB

Strained SiGe-alloy layers formed by sol

✍ P. Songsiriritthigul; G. Holmén; E. Olsson 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 575 KB

Strain induced defects in Si1−xGex-alloy

✍ Prayoon Songsiriritthigul; G. Holmén 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 861 KB

Ion-beam-induced epitaxial crystallisati

✍ Naoto Kobayashi; Masataka Hasegawa; Nobuyuki Hayashi; Hisao Tanoue; Hajime Shiba 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 498 KB

Ion-beam-induced epitaxial crystallizati

✍ N. Kobayashi; D.H. Zhu; M. Hasegawa; H. Katsumata; Y. Tanaka; N. Hayashi; Y. Mak 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 459 KB