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Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1−xCx layers in Si fabricated by C ion implantation

✍ Scribed by N. Kobayashi; D.H. Zhu; M. Hasegawa; H. Katsumata; Y. Tanaka; N. Hayashi; Y. Makita; H. Shibata; S. Uekusa

No coin nor oath required. For personal study only.

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