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Growth of pseudomorphic Si1−yCy and Si1−x−yGexCy alloy layers on Si by ion implantation and pulsed excimer laser induced epitaxy

✍ Scribed by Eric Fogarassy; Adriana Grob; Jean-Jacques Grob; Dominique Muller; Bernard Prévot; Salomé de Unamuno; Pierre Boher; Marc Stehle

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Bulk and surface structural properties o

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Strain compensation in Si1−x−yGexCy laye

✍ A Grob; J.J Grob; D Muller; B Prévot; R Stuck; E Fogarassy 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 297 KB

Photoluminescence studies of epitaxial S

✍ H. Katsumata; N. Kobayashi; Y. Makita; M. Hasegawa; N. Hayashi; H. Shibata; S. U 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 485 KB

Ion-beam-induced epitaxial crystallisati

✍ Naoto Kobayashi; Masataka Hasegawa; Nobuyuki Hayashi; Hisao Tanoue; Hajime Shiba 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 498 KB

Characterization of Si1−x−yGexCy films g

✍ Jian-Shing Luo; Wen-Tai Lin; C.Y Chang; P.S Shih; F.M Pan; T.C Chang 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 318 KB

Realization of Si1−x−yGexCySi heterostru

✍ J. Boulmer; P. Boucaud; C. Guedj; D. Débarre; D. Bouchier; E. Finkman; S. Prawer 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 400 KB