Realization of Si1−x−yGexCySi heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC: H films deposited on Si(100)

✍ Scribed by J. Boulmer; P. Boucaud; C. Guedj; D. Débarre; D. Bouchier; E. Finkman; S. Prawer; K. Nugent; A. Desmur-Larré; C. Godet; P. Roca i Cabarrocas

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 400 KB
• Volume: 157
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(95)00362-2