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Erratum to: “Ion-beam-induced epitaxial crystallisation of metastable Si1−x−yGexCy layers fabricated by Ge and C ion implantation” [Nucl. Instr. and Meth. B 106 (1995) 289]

✍ Scribed by Naoto Kobayashi; Masataka Hasegawa; Nobuyuki Hayashi; Hisao Tanoue; Hajime Shibata; Yunosuke Makita


Book ID
113288075
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
512 KB
Volume
114
Category
Article
ISSN
0168-583X

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