✦ LIBER ✦

Relaxation of strain during solid phase epitaxial growth of Ge+ ion implanted layers in silicon

✍ Scribed by G. Holmén; Prayoon Songsiriritthigul

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Strained SiGe-alloy layers formed by sol

✍ P. Songsiriritthigul; G. Holmén; E. Olsson 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 575 KB

Thermal solid phase epitaxial growth and

✍ P. Songsiriritthigul; G. Holmén 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 511 KB

Strain induced defects in Si1−xGex-alloy

✍ Prayoon Songsiriritthigul; G. Holmén 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 861 KB

Substitutional solid solubility limits d

✍ Williams, J. S. 📂 Article 📅 1982 🏛 American Institute of Physics 🌐 English ⚖ 566 KB

Solid-phase epitaxial growth of polycrys

✍ Quach, N.T.; Reif, R. 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 445 KB

Effect of ion implantation on redistribu

✍ O. V. Aleksandrov; Yu. A. Nikolaev; N. A. Sobolev 📂 Article 📅 1999 🏛 Springer 🌐 English ⚖ 94 KB